2N60G-TN3-R
vs
2N60LG-TMA-T
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
UNISONIC TECHNOLOGIES CO LTD
|
Part Package Code |
TO-252
|
TO-251
|
Pin Count |
4
|
3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
140 mJ
|
140 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
2 A
|
2 A
|
Drain-source On Resistance-Max |
5 Ω
|
5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
13 pF
|
10 pF
|
JEDEC-95 Code |
TO-252
|
TO-251
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
44 W
|
44 W
|
Pulsed Drain Current-Max (IDM) |
8 A
|
8 A
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
180 ns
|
150 ns
|
Turn-on Time-Max (ton) |
115 ns
|
120 ns
|
Base Number Matches |
2
|
1
|
Package Description |
|
IN-LINE, R-PSIP-T3
|
|
|
|
Compare 2N60G-TN3-R with alternatives
Compare 2N60LG-TMA-T with alternatives