2N60G-TN3-R
vs
2N60-TN3-R
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
UNISONIC TECHNOLOGIES CO LTD
|
UNISONIC TECHNOLOGIES CO LTD
|
| Part Package Code |
TO-252
|
|
| Pin Count |
4
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
140 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
600 V
|
|
| Drain Current-Max (ID) |
2 A
|
|
| Drain-source On Resistance-Max |
5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| Feedback Cap-Max (Crss) |
13 pF
|
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
44 W
|
|
| Pulsed Drain Current-Max (IDM) |
8 A
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Max (toff) |
180 ns
|
|
| Turn-on Time-Max (ton) |
115 ns
|
|
| Base Number Matches |
2
|
1
|
|
|
|
Compare 2N60G-TN3-R with alternatives
Compare 2N60-TN3-R with alternatives