2N6058E3
vs
JAN2N6058
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
12 A
12 A
Configuration
DARLINGTON
DARLINGTON WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
1000
150
Operating Temperature-Max
175 °C
200 °C
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
150 W
Surface Mount
NO
NO
Base Number Matches
1
9
Package Description
SIMILAR TO TO-3, 2 PIN
Factory Lead Time
36 Weeks
Case Connection
COLLECTOR
Collector-Emitter Voltage-Max
80 V
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Qualification Status
Qualified
Reference Standard
MIL-19500/502D
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Compare 2N6058E3 with alternatives
Compare JAN2N6058 with alternatives