2N5581E3
vs
JANTXV2N5581
feature comparison
| Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SEMICOA CORP
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.8 A
|
0.8 A
|
| Collector-Emitter Voltage-Max |
40 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
20
|
| JEDEC-95 Code |
TO-46
|
TO-46
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TO-46
|
| Package Description |
|
HERMETIC SEALED, METAL CAN-3
|
| Pin Count |
|
3
|
| Operating Temperature-Max |
|
200 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
2 W
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/423
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare 2N5581E3 with alternatives
Compare JANTXV2N5581 with alternatives