2N5551
vs
MMBT5551_R1_00001
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
DIODES INC
|
PANJIT INTERNATIONAL INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Diodes Incorporated
|
PANJIT
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
160 V
|
160 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
80
|
30
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-W3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.25 V
|
|
| Base Number Matches |
10
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 2N5551 with alternatives
Compare MMBT5551_R1_00001 with alternatives