2N4957
vs
JAN2N4957
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
GENERAL TRANSISTOR CORP
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.03 A
|
0.03 A
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
30
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Surface Mount |
NO
|
NO
|
| Transition Frequency-Nom (fT) |
1200 MHz
|
|
| Base Number Matches |
15
|
3
|
| Package Description |
|
HERMETIC SEALED, METAL CAN-4
|
| Case Connection |
|
ISOLATED
|
| Collector-Base Capacitance-Max |
|
0.8 pF
|
| Collector-Emitter Voltage-Max |
|
30 V
|
| Highest Frequency Band |
|
ULTRA HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
|
TO-72
|
| JESD-30 Code |
|
O-MBCY-W4
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Power Dissipation Ambient-Max |
|
0.2 W
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/426
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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