2N3999SMDR4 vs JAN2N3999 feature comparison

2N3999SMDR4 TT Electronics Power and Hybrid / Semelab Limited

Buy Now Datasheet

JAN2N3999 Solitron Devices Inc

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer SEMELAB LTD SOLITRON DEVICES INC
Part Package Code TO-276AB
Package Description CHIP CARRIER, R-CBCC-N3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 5 A 5 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 80 60
JEDEC-95 Code TO-276AB TO-111
JESD-30 Code R-CBCC-N3 O-MUPM-D3
JESD-609 Code e4
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material CERAMIC, METAL-SEALED COFIRED METAL
Package Shape RECTANGULAR ROUND
Package Style CHIP CARRIER POST/STUD MOUNT
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Qualified
Surface Mount YES NO
Terminal Finish GOLD
Terminal Form NO LEAD SOLDER LUG
Terminal Position BOTTOM UPPER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 40 MHz 40 MHz
Base Number Matches 1 1
HTS Code 8541.29.00.75
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 30 W
Power Dissipation-Max (Abs) 2 W
Reference Standard MIL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

Compare 2N3999SMDR4 with alternatives

Compare JAN2N3999 with alternatives