2N3954
vs
SI3457BDV-T1-E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
INTER F E T CORP
VISHAY SILICONIX
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Samacsys Manufacturer
InterFET
Configuration
SEPARATE, 2 ELEMENTS
SINGLE WITH BUILT-IN DIODE
FET Technology
JUNCTION
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
1.2 pF
JEDEC-95 Code
TO-71
JESD-30 Code
O-MBCY-W6
R-PDSO-G6
Number of Elements
2
1
Number of Terminals
6
6
Operating Mode
DEPLETION MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Power Dissipation Ambient-Max
0.5 W
Power Dissipation-Max (Abs)
0.5 W
2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
BOTTOM
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Part Package Code
TSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3.7 A
Drain-source On Resistance-Max
0.054 Ω
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare 2N3954 with alternatives
Compare SI3457BDV-T1-E3 with alternatives