2N1132
vs
2N1132A
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ZETEX PLC
|
MICROSEMI CORP
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.6 A
|
0.6 A
|
| Collector-Emitter Voltage-Max |
35 V
|
40 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JEDEC-95 Code |
TO-39
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.6 W
|
0.6 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
CECC
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
60 MHz
|
60 MHz
|
| VCEsat-Max |
1.5 V
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare 2N1132 with alternatives
Compare 2N1132A with alternatives