2N1131LE3
vs
2N3251
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Contact Manufacturer
Ihs Manufacturer
MICROSEMI CORP
HI-TRON SEMICONDUCTOR CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.6 A
0.2 A
Collector-Emitter Voltage-Max
40 V
40 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
30
JEDEC-95 Code
TO-5
TO-18
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
PNP
PNP
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
Part Package Code
BCY
Package Description
TO-18, 3 PIN
Pin Count
3
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
1.2 W
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Transition Frequency-Nom (fT)
300 MHz
Compare 2N1131LE3 with alternatives
Compare 2N3251 with alternatives