2N1131LE3
vs
2N3250
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
ASI SEMICONDUCTOR INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.6 A
0.2 A
Collector-Emitter Voltage-Max
40 V
40 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
50
JEDEC-95 Code
TO-5
TO-18
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
PNP
PNP
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Rohs Code
Part Package Code
BCY
Package Description
TO-18, 3 PIN
Pin Count
3
JESD-609 Code
e0
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
1.2 W
Qualification Status
Not Qualified
Terminal Finish
TIN LEAD
Transition Frequency-Nom (fT)
250 MHz
Compare 2N1131LE3 with alternatives
Compare 2N3250 with alternatives