2114L-3DCQM vs 5962-8102406VA feature comparison

2114L-3DCQM Fairchild Semiconductor Corporation

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5962-8102406VA Intersil Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP HARRIS SEMICONDUCTOR
Package Description DIP, DIP18,.3 ,
Reach Compliance Code compliant unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 300 ns 300 ns
I/O Type COMMON
JESD-30 Code R-XDIP-T18 R-GDIP-T18
JESD-609 Code e0 e0
Memory Density 4096 bit 4096 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 4 4
Moisture Sensitivity Level 2A
Number of Terminals 18 18
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 1KX4 1KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Equivalence Code DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology MOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Number of Functions 1
Number of Ports 1
Output Enable NO
Standby Voltage-Min 2 V
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V

Compare 2114L-3DCQM with alternatives

Compare 5962-8102406VA with alternatives