1T359 vs 1SV293 feature comparison

1T359 Sony Semiconductor

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1SV293 Toshiba America Electronic Components

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SONY CORP TOSHIBA CORP
Package Description R-PDSO-F2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 30 V 10 V
Configuration SINGLE SINGLE
Diode Capacitance-Nom 29.5 pF 19 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-F2 R-PDSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 85 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 35 V 10 V
Reverse Current-Max 0.02 µA 0.003 µA
Reverse Test Voltage 28 V 10 V
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 2
Part Package Code SOD
Diode Cap Tolerance 5.26%
Diode Capacitance Ratio-Min 1.55
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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