1SS352TPHR4
vs
1N6540
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
TOSHIBA CORP
MICROSEMI CORP
Package Description
R-PDSO-G2
O-LALF-W2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.80
Application
FAST RECOVERY
ULTRA FAST RECOVERY
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
1.8 V
JESD-30 Code
R-PDSO-G2
O-LALF-W2
Non-rep Pk Forward Current-Max
1 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
Output Current-Max
0.1 A
1 A
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max
0.2 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
85 V
800 V
Reverse Current-Max
0.5 µA
10 µA
Reverse Recovery Time-Max
0.004 µs
0.075 µs
Reverse Test Voltage
80 V
Surface Mount
YES
NO
Terminal Form
GULL WING
WIRE
Terminal Position
DUAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Pbfree Code
Rohs Code
Case Connection
ISOLATED
JESD-609 Code
e0
Terminal Finish
TIN LEAD
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