1SMC10AT3
vs
SMCJ10A-E3/57T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MOTOROLA INC
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY, LOW IMPEDANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min
11.1 V
11.1 V
Clamping Voltage-Max
17 V
17 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
10 V
10 V
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
2
Pbfree Code
Rohs Code
Part Package Code
DO-214AB
Breakdown Voltage-Max
12.3 V
Breakdown Voltage-Nom
11.7 V
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AB
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
6.5 W
Time@Peak Reflow Temperature-Max (s)
30
Compare 1SMC10AT3 with alternatives
Compare SMCJ10A-E3/57T with alternatives