1SMC10AT3 vs MASMCJLCE10AE3TR feature comparison

1SMC10AT3 onsemi

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MASMCJLCE10AE3TR Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Manufacturer Package Code CASE 403-03
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Clamping Voltage-Max 17 V 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.75 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology ZENER AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 2
Part Package Code DO-214AB
Breakdown Voltage-Nom 11.7 V
JEDEC-95 Code DO-214AB
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1SMC10AT3 with alternatives

Compare MASMCJLCE10AE3TR with alternatives