1SMA8.0AT3 vs SMAJ8.0A-GT3 feature comparison

1SMA8.0AT3 Motorola Mobility LLC

Buy Now Datasheet

SMAJ8.0A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Manufacturer Package Code CASE 403B-01
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 8.89 V 8.99 V
Clamping Voltage-Max 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8 V 8 V
Reverse Current-Max 25 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 2
Rohs Code Yes
Breakdown Voltage-Max 10.23 V
JEDEC-95 Code DO-214AC
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Power Dissipation-Max 1 W
Reference Standard UL RECOGNIZED

Compare 1SMA8.0AT3 with alternatives

Compare SMAJ8.0A-GT3 with alternatives