1SMA8.0AT3
vs
SMAJ8.0
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MOTOROLA INC
GALAXY SEMI-CONDUCTOR CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
Manufacturer Package Code
CASE 403B-01
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
8.89 V
8.89 V
Clamping Voltage-Max
13.6 V
15 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
8 V
8 V
Reverse Current-Max
25 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
45
Rohs Code
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
10.9 V
Breakdown Voltage-Nom
9.9 V
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Compare 1SMA8.0AT3 with alternatives
Compare SMAJ8.0 with alternatives