1SMA8.0AT3
vs
SMAJ7.5AHM2G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MOTOROLA INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
R-PDSO-C2
R-PDSO-C2
Pin Count
2
Manufacturer Package Code
CASE 403B-01
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
8.89 V
8.33 V
Clamping Voltage-Max
13.6 V
12.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
8 V
7.5 V
Reverse Current-Max
25 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
4
1
Rohs Code
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.21 V
Breakdown Voltage-Nom
8.77 V
JEDEC-95 Code
DO-214AC
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
1 W
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30
Compare 1SMA8.0AT3 with alternatives
Compare SMAJ7.5AHM2G with alternatives