1N8164E3
vs
TGL34-36A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
EIC SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
Factory Lead Time
21 Weeks
Additional Feature
HIGH RELIABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min
34.2 V
34.2 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
49.9 V
49.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PELF-R2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-50 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2,4-4,4-5
MIL-STD-750
Rep Pk Reverse Voltage-Max
30 V
30.8 V
Reverse Current-Max
0.5 µA
5 µA
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WRAP AROUND
Terminal Position
AXIAL
END
Base Number Matches
2
3
Package Description
SOD-80, MELF-2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
37.8 V
Breakdown Voltage-Nom
36 V
Forward Voltage-Max (VF)
3.5 V
Reverse Test Voltage
30.8 V
Compare 1N8164E3 with alternatives
Compare TGL34-36A with alternatives