1N8164E3
vs
MV1N8164
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Factory Lead Time
21 Weeks
25 Weeks
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
34.2 V
34.2 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
49.9 V
49.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2,4-4,4-5
IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
0.5 µA
0.5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Compare 1N8164E3 with alternatives
Compare MV1N8164 with alternatives