1N8157USE3
vs
MX1N8157US
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
MELF-2
|
MELF-2
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
21 Weeks
|
25 Weeks
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Breakdown Voltage-Min |
17.1 V
|
17.1 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
25.1 V
|
25.1 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| JESD-609 Code |
e3
|
|
| Non-rep Peak Rev Power Dis-Max |
150 W
|
150 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Standard |
IEC-61000-4-2, 4-4
|
IEC-61000-4-2, 4-4; MIL-19500
|
| Rep Pk Reverse Voltage-Max |
15 V
|
15 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare 1N8157USE3 with alternatives
Compare MX1N8157US with alternatives