MX1N8157US vs MS1N8157 feature comparison

MX1N8157US Microchip Technology Inc

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MS1N8157 Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description MELF-2
Reach Compliance Code compliant compliant
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 17.1 V 17.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 25.1 V 25.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2, 4-4; MIL-19500 IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max 15 V 15 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 2 2
Reverse Current-Max 1 µA

Compare MX1N8157US with alternatives

Compare MS1N8157 with alternatives