1N746APBFREE
vs
LMSZ5226BT1G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
LESHAN RADIO CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Date Of Intro |
2018-01-30
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
28 Ω
|
28 Ω
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
125 °C
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
20 mA
|
20 mA
|
| Base Number Matches |
1
|
1
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare 1N746APBFREE with alternatives
Compare LMSZ5226BT1G with alternatives