1N6476E3
vs
JANTXV1N6476
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSS COMPONENTS
|
| Package Description |
O-LALF-W2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
|
HIGH RELIABILITY
|
| Breakdown Voltage-Min |
54 V
|
54 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
3 W
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
2
|
| Breakdown Voltage-Nom |
|
54 V
|
| Clamping Voltage-Max |
|
78.5 V
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/552
|
| Rep Pk Reverse Voltage-Max |
|
52 V
|
|
|
|
Compare 1N6476E3 with alternatives
Compare JANTXV1N6476 with alternatives