1N6466
vs
P6KE36CA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
GLASS, E PACKAGE, 2 PIN
Reach Compliance Code
compliant
not_compliant
Factory Lead Time
21 Weeks
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min
33 V
34.2 V
Breakdown Voltage-Nom
33 V
36 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
47.5 V
49.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
500 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
30.5 V
30.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Matte Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
12
16
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
Taiwan Semiconductor
Breakdown Voltage-Max
37.8 V
JEDEC-95 Code
DO-15
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
10
Compare 1N6466 with alternatives
Compare P6KE36CA with alternatives