P4KE68CAHR1G
vs
BZW04-58BHB0G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
DO-41, 2 PIN
|
O-PALF-W2
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
|
| Breakdown Voltage-Max |
71.4 V
|
71.4 V
|
| Breakdown Voltage-Min |
64.6 V
|
64.6 V
|
| Breakdown Voltage-Nom |
68 V
|
68 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
92 V
|
92 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-204AL
|
DO-204AL
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e3
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Standard |
AEC-Q101; UL RECOGNIZED
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
58.1 V
|
58.1 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare P4KE68CAHR1G with alternatives
Compare BZW04-58BHB0G with alternatives