1N6382 vs JAN1N6039A feature comparison

1N6382 International Semiconductor Inc

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JAN1N6039A Semicon Components Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC SEMICON COMPONENTS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 9.4 V 9.5 V
Case Connection ISOLATED CATHODE
Clamping Voltage-Max 11.6 V 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8 V 8.5 V
Reverse Current-Max 25 µA 50 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Rohs Code No
Breakdown Voltage-Max 10.5 V
Breakdown Voltage-Nom 10 V
JESD-609 Code e0
Reference Standard MIL-19500/507
Terminal Finish TIN LEAD

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