1N6303ARL
vs
1.5KE200A-G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ON SEMICONDUCTOR
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Category CO2 Kg
8.54
8.54
Compliance Temperature Grade
Military: -65C to +175C
Candidate List Date
2019-01-15
SVHC Over MCV
7439-92-1
Conflict Mineral Status
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
Conflict Minerals Statement
Additional Feature
HIGH RELIABILITY, LOW IMPEDANCE
Breakdown Voltage-Max
210 V
210 V
Breakdown Voltage-Min
190 V
190 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
UL RECOGNIZED
Reference Voltage-Nom
200 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Tol-Max
5%
Working Test Current
1 mA
Base Number Matches
1
3
EU RoHS Version
RoHS 2 (2015/863/EU)
JEDEC-95 Code
DO-201AE
Moisture Sensitivity Level
1
Rep Pk Reverse Voltage-Max
171 V
Compare 1N6303ARL with alternatives
Compare 1.5KE200A-G with alternatives