1N6301A-E3/54
vs
1.5KE170AE3/1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
VISHAY SEMICONDUCTORS
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
179 V
179 V
Breakdown Voltage-Min
162 V
162 V
Breakdown Voltage-Nom
170.5 V
170.5 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
234 V
244 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
145 V
145 V
Reverse Current-Max
1 µA
Reverse Test Voltage
145 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Base Number Matches
1
1
Compare 1N6301A-E3/54 with alternatives
Compare 1.5KE170AE3/1 with alternatives