1N6297ATR vs MV1N6297AE3TR feature comparison

1N6297ATR Central Semiconductor Corp

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MV1N6297AE3TR Microsemi Corporation

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 102 V 102 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Pin Count 2
Manufacturer Package Code CASE 1
Breakdown Voltage-Max 126 V
Breakdown Voltage-Min 114 V
Breakdown Voltage-Nom 120 V
Clamping Voltage-Max 165 V
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.52 W

Compare 1N6297ATR with alternatives

Compare MV1N6297AE3TR with alternatives