1N6297ATR vs 1N6298-T feature comparison

1N6297ATR Microsemi Corporation

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1N6298-T Diodes Incorporated

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP DIODES INC
Package Description CASE 1, 2 PIN O-XALF-W2
Pin Count 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 126 V 143 V
Breakdown Voltage-Min 114 V 117 V
Breakdown Voltage-Nom 120 V 130 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 165 V 187 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-XALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 102 V 105 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA

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