1N6286AG
vs
1N6286/4G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
LITTELFUSE INC
VISHAY SEMICONDUCTORS
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
LITTELFUSE
Additional Feature
HIGH RELIABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
45.2 V
47.3 V
Breakdown Voltage-Min
40.9 V
38.7 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
6.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
36.8 V
34.8 V
Surface Mount
NO
NO
Technology
ZENER
AVALANCHE
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Pin Count
2
Manufacturer Package Code
CASE 1.5KE
Breakdown Voltage-Nom
43 V
Clamping Voltage-Max
61.9 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Compare 1N6286AG with alternatives
Compare 1N6286/4G with alternatives