1N6286/4G
vs
1N6286AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROSEMI CORP
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
2
Manufacturer Package Code
CASE 1.5KE
CASE 1
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
47.3 V
45.2 V
Breakdown Voltage-Min
38.7 V
40.9 V
Breakdown Voltage-Nom
43 V
43 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
61.9 V
59.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
1.52 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
34.8 V
36.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Pbfree Code
Reverse Current-Max
5 µA
Compare 1N6286/4G with alternatives
Compare 1N6286AE3 with alternatives