1N6270
vs
MA1N6270E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
MICROSEMI CORP
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Category CO2 Kg
8.54
8.54
Compliance Temperature Grade
Military: -55C to +175C
Military: -65C to +150C
EU RoHS Version
RoHS 2 (2015/863/EU)
RoHS 2 (2011/65/EU)
Candidate List Date
2024-06-27
EFUP
e
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.40
Breakdown Voltage-Max
10 V
10 V
Breakdown Voltage-Min
8.19 V
8.19 V
Breakdown Voltage-Nom
9.1 V
9.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
13.8 V
13.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.52 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
7.37 V
7.37 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
PURE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
37
1
Pin Count
2
Manufacturer Package Code
CASE 1
JESD-609 Code
e3
Compare 1N6270 with alternatives
Compare MA1N6270E3 with alternatives