1N6131A vs 1N6131 feature comparison

1N6131A Microsemi Corporation

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1N6131 Microchip Technology Inc

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description HERMETIC SEALED, GLASS, B PACKAGE-2 HERMETIC SEALED, GLASS, E PACKAGE-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 104.5 V 104.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 2 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 86.6 V 86.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 14 21
Factory Lead Time 21 Weeks
Breakdown Voltage-Nom 110 V
Clamping Voltage-Max 158 V

Compare 1N6131A with alternatives

Compare 1N6131 with alternatives