1N6122US
vs
JAN1N6122US
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
MICROCHIP TECHNOLOGY INC
|
Part Package Code |
MELF
|
|
Package Description |
HERMETIC SEALED, GLASS, MELF-2
|
MELF-2
|
Pin Count |
2
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Additional Feature |
METALLURGICALLY BONDED
|
HIGH RELIABILITY
|
Breakdown Voltage-Min |
44.7 V
|
44.7 V
|
Case Connection |
ISOLATED
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
2 W
|
2 W
|
Qualification Status |
Not Qualified
|
Qualified
|
Rep Pk Reverse Voltage-Max |
35.8 V
|
35.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
7
|
1
|
Clamping Voltage-Max |
|
67.8 V
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Reference Standard |
|
MIL-19500
|
Reverse Current-Max |
|
1 µA
|
Reverse Test Voltage |
|
35.8 V
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N6122US with alternatives
Compare JAN1N6122US with alternatives