1N6107A
vs
JANTXV1N6107A
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
SENSITRON SEMICONDUCTOR
Package Description
HERMETIC SEALED, GLASS, B PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
10.45 V
10.45 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
8.4 V
8.4 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
13
2
Date Of Intro
1999-07-20
Clamping Voltage-Max
15.6 V
Reference Standard
MIL-19500
Reverse Current-Max
20 µA
Compare 1N6107A with alternatives
Compare JANTXV1N6107A with alternatives