1N6105 vs JAN1N6105 feature comparison

1N6105 STMicroelectronics

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JAN1N6105 Semicon Components Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS SEMICON COMPONENTS INC
Package Description GLASS, CB-431, 2 PIN
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.01 V
Breakdown Voltage-Min 8.19 V 8.2175 V
Breakdown Voltage-Nom 9.1 V 9.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.8 V 14.07 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code E-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 600 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ELLIPTICAL ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Rep Pk Reverse Voltage-Max 6.9 V 6.9 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Operating Temperature-Min -65 °C
Qualification Status Not Qualified
Reference Standard MIL-19500/516
Reverse Current-Max 20 µA

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