1N6071A
vs
JAN1N6070A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SEMITRONICS CORP
SILICON TRANSISTOR CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
200 V
Clamping Voltage-Max
294 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
170 V
160 V
Surface Mount
NO
NO
Base Number Matches
15
6
Breakdown Voltage-Max
200 V
Breakdown Voltage-Min
181 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
JEDEC-95 Code
DO-13
JESD-30 Code
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
LONG FORM
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/500
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
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