JAN1N6070A
vs
JANTXV1N6065A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SILICON TRANSISTOR CORP
SENSITRON SEMICONDUCTOR
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
200 V
Breakdown Voltage-Min
181 V
114 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-13
JESD-30 Code
O-MALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
Qualification Status
Not Qualified
Qualified
Reference Standard
MIL-19500/500
MIL-19500
Rep Pk Reverse Voltage-Max
160 V
100 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
7
Date Of Intro
2017-11-03
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
155 °C
Operating Temperature-Min
-65 °C
Compare JAN1N6070A with alternatives
Compare JANTXV1N6065A with alternatives