1N6056E3 vs JAN1N6056ATR feature comparison

1N6056E3 Microsemi Corporation

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JAN1N6056ATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-MALF-W2 O-MALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 56.1 V 53.6 V
Breakdown Voltage-Min 45.9 V 48.5 V
Breakdown Voltage-Nom 51 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 73.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA DO-202AA
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 41 V 43 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code No
Part Package Code DO-13
Pin Count 2
JESD-609 Code e0
Qualification Status Not Qualified
Reference Standard MIL-19500
Terminal Finish TIN LEAD

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