JAN1N6056ATR vs JAN1N6056A feature comparison

JAN1N6056ATR Microsemi Corporation

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JAN1N6056A New England Semiconductor

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP NEW ENGLAND SEMICONDUCTOR
Part Package Code DO-13
Package Description O-MALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Category CO2 Kg 8.54 8.54
Compliance Temperature Grade Military: -55C to +175C
Candidate List Date 2017-01-12
Conflict Mineral Status DRC Conflict Free
Conflict Mineral Status Source CMRT V4.20
Breakdown Voltage-Max 53.6 V 53.6 V
Breakdown Voltage-Min 48.5 V 48.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA DO-13
JESD-30 Code O-MALF-W2 O-MALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500/500
Rep Pk Reverse Voltage-Max 43 V 43 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 8

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