1N6052AE3
vs
JAN1N6052A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
GENERAL SEMICONDUCTOR INC
Package Description
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Reach Compliance Code
compliant
unknown
Factory Lead Time
21 Weeks
Breakdown Voltage-Max
37.8 V
37.8 V
Breakdown Voltage-Min
34.2 V
34.2 V
Breakdown Voltage-Nom
36 V
Case Connection
ISOLATED
CATHODE
Clamping Voltage-Max
49.9 V
49.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-202AA
JESD-30 Code
O-MALF-W2
O-MALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Rep Pk Reverse Voltage-Max
30 V
30 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
8
Part Package Code
DO-13
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
CAPACITANCE IS CAPTURED FROM THE GRAPH
Diode Capacitance-Min
10000 pF
Qualification Status
Not Qualified
Reference Standard
MIL-19500/507
Reverse Current-Max
5 µA
Compare 1N6052AE3 with alternatives
Compare JAN1N6052A with alternatives