1N6052A
vs
1N6052AE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SEMICON COMPONENTS INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
36 V
|
36 V
|
| Clamping Voltage-Max |
49.9 V
|
49.9 V
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-609 Code |
e0
|
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
4
|
2
|
| Package Description |
|
HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
|
| Breakdown Voltage-Max |
|
37.8 V
|
| Breakdown Voltage-Min |
|
34.2 V
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-202AA
|
| JESD-30 Code |
|
O-MALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
|
1500 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
1 W
|
| Technology |
|
AVALANCHE
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N6052A with alternatives
Compare 1N6052AE3 with alternatives