1N5822
vs
1N5822
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
SEMTECH CORP
|
| Package Description |
HERMETIC SEALED, GLASS, B PACKAGE-2
|
MELF-2
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| Factory Lead Time |
24 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
SEMTECH
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.7 V
|
0.7 V
|
| JESD-30 Code |
O-LALF-W2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
e0
|
| Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
40 V
|
40 V
|
| Reverse Current-Max |
100 µA
|
100 µA
|
| Surface Mount |
NO
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
16
|
13
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Reverse Test Voltage |
|
40 V
|
|
|
|
Compare 1N5822 with alternatives
Compare 1N5822 with alternatives