1N5818-1
vs
BYV10-30B2
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
STMICROELECTRONICS
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
O-LALF-W2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.6 V
|
|
| JEDEC-95 Code |
DO-41
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Non-rep Pk Forward Current-Max |
25 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 1N5818-1 with alternatives
Compare BYV10-30B2 with alternatives