1N5817M
vs
SRT12HB0G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
GENERAL INSTRUMENT CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
GLASS, MELF-2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| Additional Feature |
LOW POWER LOSS
|
LOW POWER LOSS
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-PALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
20 V
|
20 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Base Number Matches |
6
|
1
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Application |
|
EFFICIENCY
|
| Forward Voltage-Max (VF) |
|
0.55 V
|
| JESD-609 Code |
|
e3
|
| Non-rep Pk Forward Current-Max |
|
25 A
|
| Number of Phases |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
AEC-Q101
|
| Reverse Current-Max |
|
500 µA
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare 1N5817M with alternatives
Compare SRT12HB0G with alternatives