SRT12HB0G vs DLSR102 feature comparison

SRT12HB0G Taiwan Semiconductor

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DLSR102 International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS
Application EFFICIENCY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.55 V 0.45 V
JESD-30 Code O-PALF-W2 O-LELF-R2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 20 V 20 V
Reverse Current-Max 500 µA
Surface Mount NO YES
Technology SCHOTTKY SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form WIRE WRAP AROUND
Terminal Position AXIAL END
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1
Package Description O-LELF-R2
Qualification Status Not Qualified

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