1N5817 vs S1G-T3 feature comparison

1N5817 EIC Semiconductor Inc

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S1G-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-41
Package Description PLASTIC PACKAGE-2 R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature LOW POWER LOSS, HIGH RELIABILITY LOW POWER LOSS
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.75 V
JEDEC-95 Code DO-41 DO-214AC
JESD-30 Code O-PALF-W2 R-PDSO-C2
Non-rep Pk Forward Current-Max 25 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 20 V 400 V
Surface Mount NO YES
Technology SCHOTTKY
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 98 3
Moisture Sensitivity Level 1
Reverse Recovery Time-Max 2.5 µs

Compare 1N5817 with alternatives

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